PURPOSE: To improve the efficiency of a magnetic device using a magnetic film having strong saturation magnetization and high thermal stability by a method wherein a thin manganese layer and a thine silicon layer are alternately laminated.
CONSTITUTION: A thin manganese layer and a thin silicon layer are alternately laminated in layer thickness of 100Å on a substrate. The above-mentioned lamination is conducted in the degree of about vacuum of 10 -8 Torr, and the desirable substrate temperature for generation of ferromagnetic property is in the range of 250 to 450°C, and among ferromagnetic materials, the value of saturated magnetization especially becomes large when the first layer is formed by an Mn layer using an MgO (100) substrate and also when the first layer is formed by an Si layer or an Mn layer using a (100) substrate. The film having especially large saturated magnetization, α-Mn crystal is oriented to (100) with α-phase of Mn. The saturated magnetization can be made larger when the thickness of the thin film to be laminated is reduced.